?2001 fairchild semiconductor corporation may 2001 SGS5N150UF rev. a SGS5N150UF igbt SGS5N150UF general description fairchild?s insulated gate bipolar transistor ( igbt) provides low conduction and switching losses. SGS5N150UF is designed for the switching power supply applications. features ? high speed switching ? low saturation voltage : v ce(sat) = 4.7 v @ i c = 5a ? high input impedance absolute maximum ratings t c = 25 c unless otherwise noted notes : (1) repetitive rating : pulse width limited by max. junction temperature thermal characteristics symbol description SGS5N150UF units v ces collector-emitter voltage 1500 v v ges gate-emitter voltage 20 v i c collector current @ t c = 25 c10 a collector current @ t c = 100 c5 a i cm (1) pulsed collector current 20 a p d maximum power dissipation @ t c = 25 c50 w maximum power dissipation @ t c = 100 c20 w t j operating junction temperature -55 to +150 c t stg storage temperature range -55 to +150 c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 c symbol parameter typ. max. units r jc thermal resistance, junction-to-case -- 2.5 c / w r ja thermal resistance, junction-to-ambient -- 62.5 c / w application switching power supply - high input voltage off-line converter g c e to-220f g c e g c e
?2001 fairchild semiconductor corporation SGS5N150UF rev. a SGS5N150UF electrical characteristics of igbt t c = 25 c unless otherwise noted symbol parameter test conditions min. typ. max. units off characteristics bv ces collector-emitter breakdown voltage v ge = 0v, i c = 1ma 1500 -- -- v i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 1.0 ma i ges g-e leakage current v ge = v ges , v ce = 0v -- -- 100 na on characteristics v ge(th) g-e threshold voltage i c = 5ma, v ce = v ge 2.0 3.0 4.0 v v ce(sat) collector to emitter saturation voltage i c = 5a , v ge = 10v -- 4.7 5.5 v dynamic characteristics c ies input capacitance v ce = 10v , v ge = 0v, f = 1mhz -- 780 -- pf c oes output capacitance -- 130 -- pf c res reverse transfer capacitance -- 70 -- pf switching characteristics t d(on) turn-on delay time v cc = 600 v i c = 5a r g =10 ? v ge = 10v inductive load t c = 25 c -- 10 -- ns t r rise time -- 15 -- ns t d(off) turn-off delay time -- 30 50 ns t f fall time -- 70 120 ns e on turn-on switching loss -- 190 -- uj e off turn-off switching loss -- 100 -- uj e ts total switching loss -- 290 580 uj q g total gate charge v ce = 600 v, i c = 5a v ge = 10v -- 30 45 nc q ge gate-emitter charge -- 3 5 nc q gc gate-collector charge -- 15 25 nc
?2001 fairchild semiconductor corporation SGS5N150UF rev. a SGS5N150UF 1e-5 1e-4 1e-3 0.01 0.1 1 10 0.01 0.1 1 10 0.5 0.2 0.1 0.05 0.02 0.01 single pulse thermal response [zthjc] rectangular pulse duration [sec] fig 1. typical output characteristics fig 2. typical output characteristics fig 3. maximum collector current vs. case temperature fig 4. saturation voltage vs. case temperature fig 5. load current vs. frequency fig 6. transient thermal impedance of igbt junction to case 0 5 10 15 20 0 10 20 30 40 50 60 70 80 20 v vge=5 v 15 v 10 v ic [a] vce [v] 0 4 8 121620 0 10 20 30 40 50 vge=10v tc = 100 tc = 25 ic [a] vce [v] 0 2 4 6 8 10 12 25 50 75 100 125 150 vge = 10v tc [ ] ic [a] 20 40 60 80 100 120 140 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 vge=10v ic = 5a ic =10a vce(sat) [v] tc [ ] 0.1 1 10 100 1000 0 2 4 6 8 10 duty cycle : 50% tc = 100 o c power dissipation = 12w vcc = 600v load current : peak of square wave load current [a] frequency [khz] pdm t1 t2 duty factor d = t1 / t2 peak tj = pdm zthjc + t c
?2001 fairchild semiconductor corporation SGS5N150UF rev. a SGS5N150UF 20 40 60 80 100 200 400 600 800 1000 1200 vcc = 600v rg = 10 ? vge = 10v ic = 3a ic = 5a ic = 10a energy [uj] tc [ ] 0 5 10 15 20 25 30 100 200 300 400 500 600 vcc = 600v ic = 5a esw eon eoff energy [uj] rg [ ? ] 0 50 100 150 200 250 300 350 0 2 4 6 8 10 12 14 vcc = 600v ic = 5a vge [v] qg [nc] 110 0 200 400 600 800 1000 1200 cres coes cies capacitance [pf] vce [v] fig 8. typical gate charge characteristic fig 9. typical switching loss vs. gate resistance fig 10. typical switching loss vs. case temperature fig 11. typical switching loss vs. collector current fig 12. turn-off soa 46810 0.2 0.4 0.6 0.8 1.0 1.2 vcc = 600v rg = 10 ? tc = 100 eon eoff esw energy [mj] ic [a] 1 10 100 1000 1 10 safe operating area vge = 20v, tc = 100 ic [a] vce [v] fig 7. typical capacitance vs. collector to emitter voltage
?2001 fairchild semiconductor corporation SGS5N150UF rev. a SGS5N150UF package dimension (7.00) (0.70) max1.47 (30 ) #1 3.30 0.10 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45 ) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.20 0.35 0.10 ?.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ?.05 to-220f (fs pkg code aq) dimensions in millimeters
?2001 fairchild semiconductor corporation trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev.h2 acex? bottomless? coolfet? crossvolt? densetrench? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? fast ? fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? microwire? optologic? optoplanar? pacman ? pop? powertrench ? qfet? qs? qt optoelectronics? quiet series? slient switcher ? smart start? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? uhc? ultrafet ? vcx?
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